052-6203 rev e 6-2008 APT20GT60KR(g) typical performance curves maximum ratings all ratings: t c = 25c unless otherwise specifed. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 0.5 m a) gate threshold voltage (v ce = v ge , i c = 500 a , t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 20a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 20a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volts a na symbol v c es v ge i c1 i c2 i cm ssoa p d t j ,t stg t l APT20GT60KR(g) 600 30 43 20 80 80a @ 600v 174 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 150c switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. apt w ebsite - http://www .a dv ancedpo we r. com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. min typ max 600 3 4 5 1.6 2.0 2.5 2.8 25 1000 100 600v apt 20gt60kr APT20GT60KRg* *g denotes rohs compliant, pb free terminal finish. ? the thunderblot igbt ? is a new generation of high voltage power igbts. using non- punch through technology, the thunderblot igbt ? offers superior ruggedness and ultrafast switching speed. ? low forward voltage drop ? high freq. switching to 150khz ? low tail current ? ultra low leakage current ? rbsoa and scsoa rated thunderbolt igbt ? g c e to-220
052-6203 rev e 6-2008 APT20GT60KR(g) 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clam ped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) apt reserves the right to change, without notice, the specifcations and information contained herein. thermal and mechanical characteristics unit c/w gm min typ max .72 n/a 1.9 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 20a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 600v i nductive switching (25c) v cc = 400v v ge = 15v i c = 20a r g = 5 ? t j = +25c inductive switching (125c) v cc = 400v v ge = 15v i c = 20a r g = 5 ? t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 min typ max 1100 107 63 7.5 100 7 43 80 8 9 80 39 215 210 245 8 9 100 60 215 375 395 unit pf v nc a ns j ns j
052-6203 rev e 6-2008 APT20GT60KR(g) typical performance curves v gs(th) , threshold voltage v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 250s pulse test<0.5 % duty cycle 80 70 60 50 40 30 20 10 0 80 70 60 50 40 30 20 10 0 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0 1 2 3 4 5 6 0 5 10 15 20 0 2 4 6 8 10 12 0 20 40 60 80 100 120 6 8 10 12 14 16 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 120 100 80 60 40 20 0 16 14 12 10 8 6 4 2 0 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 60 50 40 30 20 10 0 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, threshold voltage vs. junction temperature figure 8, dc collector current vs case temperature 15v 9v 8v 7v 10v 6v t j = 125c t j = 25c t j = -55c t j = 25c. 250s pulse test <0.5 % duty cycle i c = 40a i c = 20a i c = 10a v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 40a i c = 20a i c = 10a t j = 125c t j = 25c t j = -55c 13v 11v v ce = 480v v ce = 300v v ce = 120v i c = 20a t j = 25c
052-6203 rev e 6-2008 APT20GT60KR(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 5 ? l = 100 h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature r g = 5 ? , l = 100 h, v ce = 400v v ce = 400v t j = 25c , or 125c r g = 5 ? l = 100 h 10 8 6 4 2 0 35 30 25 20 15 10 5 0 1200 1000 800 600 400 200 0 1800 1600 1400 1200 1000 800 600 400 200 0 120 100 80 60 40 20 0 90 80 70 60 50 40 30 20 10 0 800 700 600 500 400 300 200 100 0 1200 1000 800 600 400 200 0 v ge = 15v t j = 125c , v ge = 15v t j = 25 or 125c ,v ge = 15v t j = 25c , v ge = 15v v ce = 400v v ge = +15v r g = 5 ? 5 10 15 20 25 30 35 40 45 5 10 15 20 25 30 35 40 45 5 10 15 20 25 30 35 40 45 5 10 15 20 25 30 35 40 45 5 10 15 20 25 30 35 40 45 5 10 15 20 25 30 35 40 45 0 10 20 30 40 50 0 25 50 75 100 125 r g = 5 ? , l = 100 h, v ce = 400v v ce = 400v v ge = +15v r g = 5 ? t j = 125c t j = 25c v ce = 400v v ge = +15v r g = 5 ? t j = 125c t j = 25c e on2, 40a e off, 40a v ce = 400v v ge = +15v t j = 125 c e on2, 20a e off, 20a e on2, 10a e off, 10a e on2, 40a e off, 40a e on2, 20a e off, 20a e on2, 10a e off, 10a
052-6203 rev e 6-2008 APT20GT60KR(g) typical performance curves 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 2,000 1,000 500 100 50 10 100 90 80 70 60 50 40 30 20 10 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance v s collecto r-to-emitter voltage figure 18,minimim switching safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 figure 19b, transient thermal impedance model 5 10 15 20 25 30 35 40 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 % v ce = 400v r g = 5 ? 250 100 50 10 5 1 c res 0.5 0.1 0.05 f max = min (f ma x , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : c oes c ies 0.407 0.314 0.0016 5 0.0585 powe r (watts ) rc mode l junction temp. ( c) case temperature. ( c)
052-6203 rev e 6-2008 APT20GT60KR(g) apt15dq60 figure 22, turn-on switching waveforms and defnitions figure 23, turn-off switching waveforms and defnitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% i c a d.u.t. v ce figure 21, inductive switching test circui t v cc apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. emitte r 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 14.73 (.580) 12.70 (.500) 1.01 (.040) 3-plcs. 0.83 (.033) 2.79 (.110) 2.29 (.090) 4.82 (.190) 3.56 (.140) 1.39 (.055) 0.51 (.020) 4.08 (.161) dia . 3.54 (.139) dimensions in millimeters and (inches) gate collector 6.85 (.270) 5.85 (.230) 1.77 (.070) 3-plcs. 1.15 (.045) 2.92 (.115) 2.04 (.080) 3.42 (.135) 2.54 (.100) 0.50 (.020) 0.41 (.016) 5.33 (.210) 4.83 (.190) drai n 12.192 (.480) 9.912 (.390) 3.683 (.145) max. to-220 (k) package outline e3 100% sn
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